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IRF740
Data Sheet July 1999 File Number
2311.3
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17424.
Features
* 10A, 400V * rDS(ON) = 0.550 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRF740 PACKAGE TO-220AB BRAND IRF740
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-220AB TOP VIEW
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-239
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRF740
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF740 400 400 10 6.3 40 20 125 1.0 520 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Modified MOSFET Symbol Showing the Internal Devices Measured From the Drain Inductances D Lead, 6mm (0.25in) From Package to Center of Die LD Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad
G LS S
TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V VGS = 10V, ID = 5.2A (Figures 8, 9) VDS 50V, ID = 5.2A (Figure 12) VDD = 200V, ID 10A, RG = 9.1, RL = 20, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 10A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
MIN 400 2.0 10 5.8 -
TYP 0.47 8.9 15 25 52 25 41 6.5 23 1250 300 80 3.5
MAX 4.0 25 250 500 0.550 21 41 75 36 63 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance
Measured From the Contact Screw on Tab to Center of Die
-
-
4.5
-
nH
Internal Source Inductance
LS
-
7.5
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RCS RJA Free Air Operation
-
-
1.0 62.5
oC/W oC/W
4-240
IRF740
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 10 40
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 10A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 10A, dISD/dt = 100A/s TJ = 25oC, ISD = 10A, dISD/dt = 100A/s
170 1.6
390 4.5
2.0 790 8.2
V ns C
2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 9.1H, RG = 25, peak IAS = 10A.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
10
0.8 0.6 0.4 0.2 0
ID, DRAIN CURRENT (A) 0 50 100 150
8
6
4
2
0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
ZJC, TRANSIENT THERMAL IMPEDANCE
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE t1 t2t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 0.1 10-2 10-3 t1, RECTANGULAR PULSE DURATION (S) 1 10 PDM
10-3 10-5
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-241
IRF740 Typical Performance Curves
100 10s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 VGS = 5.5V 9 VGS = 5.0V 6 VGS = 4.5V VGS = 4.0V 103 0 0 40 80 120 160 VDS, DRAIN TO SOURCE VOLTAGE (V) 200
Unless Otherwise Specified (Continued)
15 VGS = 10V VGS = 6.0V
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
10
100s 1ms OPERATION IN THIS REGION IS LIMITED BY rDS(ON) TC = 25oC TC = 150oC SINGLE PULSE 1 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms
1
DC
3
0.1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
VGS = 10V
IDS(ON), DRAIN TO SOURCE CURRENT (A)
15
100
VGS = 6.0V VGS = 5.5V
ID, DRAIN CURRENT (A)
12
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V
10
9 VGS = 5.0V 6
1
TJ = 150oC
TJ = 25oC
3
VGS = 4.5V VGS = 4.0V
0
0
2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5
NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
3.0
rDS(ON), DRAIN TO SOURCE
4 ON RESISTANCE
2.4
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 10A, VGS = 10V
3
VGS = 10V
1.8
2 VGS = 20V 1
1.2
0.6
0
25
10
20 30 40 TC , CASE TEMPERATURE (oC)
50
0 -60
-40
-20
0
20
40
60
80
100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
4-242
IRF740 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.15 C, CAPACITANCE (pF) 2000
Unless Otherwise Specified (Continued)
2500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.05
1500
CISS
0.95
1000 COSS 500 CRSS
0.85
0.75 -60
-40
-20
0
20
40
60
80
100 120 140 160
0
1
2
TJ, JUNCTION TEMPERATURE (oC)
10 2 5 2 5 102 VDS , DRAIN TO SOURCE VOLTAGE (V)
5
103
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15 gfs, TRANSCONDUCTANCE (S)
12
TJ = 25oC 9 TJ = 150oC 6
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V
100
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
10 TJ = 150oC TJ = 25oC 1.0
3
0 0 4 8 12 16 20 ID, DRAIN CURRENT (A)
0.1
0
0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V)
ID = 10A
16 VDS = 80V 12 VDS = 200V VDS = 320V
8
4
0 0 12 24 36 48 60 Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-243
IRF740 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
-
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS 90%
tOFF td(OFF) tf 90%
+
RG DUT
-
VDD
0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
VDS (ISOLATED SUPPLY)
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT 0
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
4-244
IRF740
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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